- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
收藏本公司 人气：170207
企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1908
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 160 | V |
VCEO | Collector-Emitter Voltage | 120 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 8 | A |
IB | Base Current-Continuous | 3 | A |
PC | Collector Power Dissipation @ TC=25℃ | 75 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA; IB= 0 | 120 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 3A; IB= 0.3A |
|
| 0.5 | V |
ICBO | Collector Cutoff Current | VCB= 160V; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
|
| 10 | μA |
hFE | DC Current Gain | IC= 3A; VCE= 4V | 50 |
|
| |
COB | Collector Output Capacitance | IE= 0; VCB= 10V; f= 1MHz |
| 200 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= -0.5A; VCE= 12V |
| 20 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= 4A, RL= 10Ω, IB1= -IB2= 0.4A, VCC=40V |
| 0.13 |
| μs |
tstg | Storage Time |
| 3.50 |
| μs | |
tf | Fall Time |
| 0.32 |
| μs | |
u hFEclassifications
O | P | Y |
50-100 | 70-140 | 90-180 |