- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
·Low Collector Saturation Voltage-
: VCE(sat)= -1.2V(Typ.)@IC= -2A
·High Power Dissipation-
: PC= 25W(Max)@TC=55℃
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -50 | V |
VCEO | Collector-Emitter Voltage | -50 | V |
VEBO | Emitter-Base Voltage | -4 | V |
IC | Collector Current-Continuous | -3 | A |
PC | Collector Power Dissipation @TC= 25℃ | 25 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -45~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; RBE=∞ | -50 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -5mA; IE= 0 | -50 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -5mA; IC= 0 | -4 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -2A; IB= -0.2A |
|
| 1.2 | V |
VBE(on) | Base-Emitter On Voltage | IC= -1A; VCE= -4V |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= -20V; IE= 0 |
|
| -0.1 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -4V | 35 |
| 200 |
|
hFE-2 | DC Current Gain | IC= -0.1A; VCE= -4V | 35 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -4V | 15 |
|
| MHz |
u hFE-1Classifications
A | B | C |
35-70 | 60-120 | 100-200 |