无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

80

V

V_CEO

Collector-Emitter Voltage                        

80

V

V_EBO

Emitter-Base Voltage

6

V

I_C

Collector Current-Continuous

12

A

I_B

Base Current-Continuous

2

A

P_C

Collector Power Dissipation

@ T_C=25℃

30

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 50mA ; I_B= 0

80

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 6A; I_B= 0.3A

0.4

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 6A; I_B= 0.3A

1.2

V

I_CBO

Collector Cutoff Current

V_CB= 80V ; I_E= 0

10

μA

I_EBO

Emitter Cutoff Current

V_EB= 6V ; I_C= 0

10

μA

h_FE-1

DC Current Gain

I_C= 1A ; V_CE= 1V

70

240

h_FE-2

DC Current Gain

I_C= 6A ; V_CE= 1V

40

C_OB

Output Capacitance

I_E= 0; V_CB= 10V;f_test= 1MHz

220

pF

f_T

Current-Gain—Bandwidth Product

I_C= 1A; V_CE= 5V

80

MHz

Switching Times

t_on

Turn-on Time

I_C= 6A ,I_B1= -I_B2= 0.3A,

V_CC= 30V, R_L= 5Ω

0.2

μs

t_stg

Storage Time

1.0

μs

t_f

Fall Time

0.2

μs

O

Y

70-140

120-240