无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

500

V

V_CEO

Collector-Emitter Voltage

400

V

V_EBO

Emitter-Base Voltage

10

V

I_C

Collector Current-Continuous  

15

A

I_CM

Collector Current-Peak  

30

A

I_B

Base Current-Continuous  

5

A

P_C

Collector Power Dissipation

@T_C=25℃

120

W

T_J

Junction Temperature

150

℃

T_stg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 25mA; I_B= 0

400

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 8A; I_B= 1.6A

0.7

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 8A; I_B= 1.6A

1.3

V

I_CBO

Collector Cutoff Current

V_CB= 500V; I_E= 0

100

μA

I_EBO

Emitter Cutoff Current

V_EB= 10V; I_C= 0

100

μA

h_FE

DC Current Gain

I_C= 8A; V_CE= 4V

10

25

C_OB

Output Capacitance

I_E= 0; V_CB= 10V; f= 1MHz

135

pF

f_T

Current-Gain—Bandwidth Product

I_E= -1.5A; V_CE= 12V

10

MHz

Switching Times

t_on

Turn-On Time

I_C= 8A; I_B1= 1.6A; I_B2= -3.2A;

V_CC= 200V; R_L= 25Ω

0.5

μs

t_stg

Storage Time

2.0

μs

t_f

Fall Time

0.15

μs