- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
·Collector-Base Breakdown Voltage-
:V(BR)CBO= 500V(Min.)
·Low Collector Saturation Voltage
·Wide Area of Safe Operation
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
Absolute maximum ratings (Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCES | Collector-Emitter Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 12 | A |
ICM | Collector Current-Peak | 22 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation @Ta=25℃ | 3 | W |
Collector Power Dissipation @TC=25℃ | 100 | ||
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA; IB= 0 | 400 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 7A; IB= 1.4A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 7A; IB= 1.4A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 100 | μA |
hFE-1 | DC Current Gain | IC= 0.1A; VCE= 5V | 15 |
|
|
|
hFE-2 | DC Current Gain | IC= 7A; VCE= 5V | 8 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.5A; VCE= 10V |
| 30 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | IC= 7A; IB1= 1.4A; IB2= -2.8A; VCC= 150V |
|
| 0.7 | μs |
ts | Storage Time |
|
| 2.0 | μs | |
tf | Fall Time |
|
| 0.3 | μs | |
"