无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-80

V

V_CEO

Collector-Emitter Voltage                        

-80

V

V_EBO

Emitter-Base Voltage

-7

V

I_C

Collector Current-Continuous

-7

A

I_CM

Collector Current-Peak

-14

A

I_B

Base Current-Continuous

-1.5

A

I_BM

Base Current-Peak

-2

A

P_C

Total Power Dissipation

@ T_C=25℃

25

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

5

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage                        

I_C= -0.1A; I_B= 0

-80

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -3.5A; I_B= -0.35A

-0.3

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -3.5A; I_B= -0.35A

-1.2

V

I_CBO

Collector Cutoff Current

V_CB= -80V; I_E= 0

-100

μA

I_CEO

Collector Cutoff Current

V_CE= -80V; I_B= 0

-100

μA

I_EBO

Emitter Cutoff Current

V_EB= -7V; I_C= 0

-100

μA

h_FE

DC Current Gain

I_C= -3.5A; V_CE= -2V

70

f_T

Current-Gain—Bandwidth Product

I_C= -0.7A; V_CE= -10V

50

MHz

Switching Times

t_on

Turn-on Time

I_C= -3.5A, I_B1= -I_B2= -0.35A,

R_L= 8Ω, V_BB2=-4V;

0.3

μs

t_stg

Storage Time

1.5

μs

t_f

Fall Time

0.2

μs