- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
收藏本公司 人气：170523
企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
·High Switching Speed
APPLICATIONS
·High voltage switching applications
·Switching regulator applications
·High speed DC-DC converter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 850 | V |
VCEO | Collector-Emitter Voltage | 800 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 2 | A |
ICM | Collector Current-Peak | 4 | A |
IB | Base Current-Continuous | 1 | A |
PC | Collector Power Dissipation @ TC=25℃ | 80 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA; IB= 0 | 800 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= 1mA; IE= 0 | 850 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 0.5A; IB= 50mA |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 0.5A; IB= 50mA |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 800V; IE= 0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC= 0 |
|
| 1.0 | mA |
hFE | DC Current Gain | IC= 0.5A; VCE= 5V | 10 |
|
|
|
Switching times | ||||||
tr | Rise Time | IB1= 50mA; IB2= -0.1A RL= 800Ω; VCC≈400V PW=20μs; Duty≤1% |
|
| 1.0 | μs |
tstg | Storage Time |
|
| 4.0 | μs | |
tf | Fall Time |
|
| 1.0 | μs | |