无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-70

V

V_CEO

Collector-Emitter Voltage

-50

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous  

-7

A

I_B

Base Current-Continuous  

-1

A

P_C

Collector Power Dissipation

@T_a=25℃

1.5

W

Collector Power Dissipation

@T_C=25℃

40

T_J

Junction Temperature

150

℃

T_stg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -50mA; I_B= 0

-50

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -4A; I_B= -0.4A

-0.4

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -4A; I_B= -0.4A

-1.2

V

I_CBO

Collector Cutoff Current

V_CB= -70V; I_E= 0

-30

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-50

μA

h_FE-1

DC Current Gain

I_C= -1A; V_CE= -1V

70

240

h_FE-2

DC Current Gain

I_C= -4A; V_CE= -1V

30

C_OB

Output Capacitance

I_E= 0; V_CB= -10V; f_test= 1MHz

250

pF

f_T

Current-Gain—Bandwidth Product

I_C= -1A; V_CE= -4V

10

MHz

Switching Times

t_on

Turn-on Time

V_CC=-30V, R_L= 10Ω,

I_B1= -I_B2= -0.3A,

0.2

μs

t_stg

Storage Time

2.5

μs

t_f

Fall Time

0.5

μs

O

Y

70-140

120-240