无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

600

V

V_CEO

Collector-Emitter Voltage                        

450

V

V_CEX

Collector-Emitter Voltage V_EB= 5V                        

600

V

V_EBO

Emitter-Base Voltage

7

V

I_C

Collector Current-Continuous

10

A

I_CM

Collector Current-Peak

20

A

I_B

Base Current-Continuous

4

A

I_BM

Base Current-Peak

8

A

P_T

Total Power Dissipation

@ T_C=25℃

65

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

1.92

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 0.2A; I_B= 0

450

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 1A

1.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 5A; I_B= 1A

1.5

V

I_CBO

Collector Cutoff Current

At rated Voltage

100

μA

I_CEO

Collector Cutoff Current

At rated Voltage

100

μA

I_EBO

Emitter Cutoff Current

At rated Voltage

100

μA

h_FE-1

DC Current Gain

I_C= 5A; V_CE= 5V

10

h_FE-2

DC Current Gain

I_C= 1mA; V_CE= 5V

5

f_T

Current-Gain—Bandwidth Product

I_C= 1A; V_CE= 10V

20

MHz

Switching times

t_on

Turn-on Time

I_C= 5A, I_B1= 1A; I_B2= -2A;

R_L= 30Ω; V_BB2= 4V

0.5

μs

t_stg

Storage Time

2.0

μs

t_f

Fall Time

0.2

μs