- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SD732
APPLICATIONS
·Designed for AF power amplifier applications.
·Recommended for output stage of 60W power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -150 | V |
VCEO | Collector-Emitter Voltage | -120 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -8 | A |
ICM | Emitter Current-Peak | -12 | A |
PC | Collector Power Dissipation @TC=25℃ | 80 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -40~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -5mA; RBE=∞ | -120 |
|
| V |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; RBE=∞ | -120 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -5mA; IE= 0 | -150 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -5mA; IC= 0 | -6 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
| -0.6 |
| V |
VBE(on) | Base-Emitter On Voltage | IC= -1A; VCE= -5V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -80V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -4V; IC= 0 |
|
| -0.1 | mA |
hFE | DC Current Gain | IC= -1A; VCE= -5V | 40 |
| 320 |
|
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -5V |
| 15 |
| MHz |
u hFEClassifications
C | D | E | F |
40-80 | 60-120 | 100-200 | 160-320 |