- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
收藏本公司 人气：170547
企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
DESCRIPTION
·High DC Current Gain
: hFE= 200(Min.)@ IC= 6A, VCE= 2V
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·LowCollector Saturation Voltage
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 8 | V |
IC | Collector Current-Continuous | 10 | A |
ICM | Collector Current-Peak | 20 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Collector Power Dissipation @Ta=25℃ | 3.0 | ||
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA, IB= 0 | 400 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A, IB= 60mA |
|
| 1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 6A, IB= 60mA |
|
| 2.2 | V |
ICBO | Collector Cutoff current | VCB= 400V, IE= 0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 8V; IC= 0 |
|
| 100 | mA |
hFE | DC Current Gain | IC= 6A; VCE= 2V | 200 |
| 5000 |
|
Switching Times | ||||||
ton | Turn-On Time | IC= 6A,IB1= -IB2= 60mA |
| 1.5 |
| μs |
tstg | Storage Time |
| 7.0 |
| μs | |
tf | Fall Time |
| 4.0 |
| μs | |