- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
收藏本公司 人气：170180
企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
·Contunuous Collector Current-IC= -1A
·Power Dissipation-PC= 15W @TC= 25℃
APPLICATIONS
·Designed for low frequency power amplifier color TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -150 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -1.0 | A |
PC | Collector Power Dissipation@TC=25℃ | 15 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA ; IB= 0 | -100 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -1mA; IE= 0 | -150 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -0.5A; IB= -50mA |
|
| -1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -0.5A; IB= -50mA |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -150V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -10 | μA |
hFE | DC Current Gain | IC= -0.2A; VCE= -5V | 40 |
| 200 |
|
fT | Current-Gain—Bandwidth Product | IC= -0.1A; VCE= -10V |
| 15 |
| MHz |
"