无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

BD201

60

V

BD203

60

V_CEO

Collector-Emitter Voltage

BD201

45

V

BD203

60

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

8

A

I_CM

Collector Current-Peak t_p≤10ms

12

A

I_CSM

Collector Current-Peak t_p≤2ms

25

A

I_B

Base Current

3

A

P_C

Collector Power Dissipation

@ T_C=25℃

60

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

2.08

℃/W

R_{th j-a}

Thermal Resistance, Junction to Ambient

70

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

BD201

I_C= 0.2A ;I_B= 0

45

V

BD203

60

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= 1mA ;I_E= 0

60

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage                     

I_E= 1mA ;I_C= 0

5

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 3A; I_B= 0.3A

1.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 6A; I_B= 0.6A

1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 6A; I_B= 0.6A

2.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= 3A ; V_CE= 2V

1.5

V

I_CEO

Collector Cutoff Current

V_CE= 30V; I_B= 0

0.2

mA

I_CBO

Collector Cutoff Current

V_CB= 40V;I_E= 0; T_J= 150℃

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C=0

0.5

mA

h_FE

DC Current Gain

BD201

I_C= 3A ; V_CE= 2V

30

BD203

I_C= 2A ; V_CE= 2V

f_T

Current-Gain—Bandwidth Product

I_C= 0.3A ; V_CE= 3V, f_test= 1.0MHz

7.0

MHz

Switching Times

t_on

Turn-On Time

I_C= 2A; I_B1= -I_B2= 0.2A

1

μs

t_off

Turn-Off Time

4

μs