- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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- 会员类型：
- 会员年限：9年
- 阚丹丹
- 电话：0510-85346300
- 手机：15961889150
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- 地址：无锡新区新梅路68号
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询价相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max.)
·Wide Area of Safe Operation
·Complement to Type 2SB1136
APPLICATIONS
·Designed for relay drivers,high speed inverters,converters
and other general high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 50 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 12 | A |
ICM | Collector Current-Peak | 15 | A |
PC | Collector Power Dissipation @Ta=25℃ | 2 | W |
Collector Power Dissipation @TC=25℃ | 30 | ||
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 1 mA; RBE=∞ | 50 |
| V | |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= 1mA; IE= 0 | 60 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= 1mA; IC= 0 | 6 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A; IB= 0.6A |
|
| 0.4 | V |
ICBO | Collector Cutoff Current | VCB= 40V ; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 4V; IC= 0 |
|
| 100 | μA |
hFE-1 | DC Current Gain | IC= 1A; VCE= 2V | 70 |
| 280 |
|
hFE-2 | DC Current Gain | IC= 5A; VCE= 2V | 30 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 5V |
| 10 |
| MHz |
Switching Times | ||||||
ton | Turn-On Time | IC= 2A, IB1= -IB2= 0.2A; RL= 4Ω; VCC= 20V |
| 0.1 |
| μs |
tstg | Storage Time |
| 1.2 |
| μs | |
tf | Fall Time |
| 0.05 |
| μs | |
u hFE-1Classifications
Q | R | S |
70-140 | 100-200 | 140-280 |