- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分:营业执照:已审核经营模式:生产制造商所在地区:江苏 无锡企业网站:
http://www.iscsemi.com
收藏本公司 人气:203389
企业档案
- 相关证件: 
- 会员类型:
- 会员年限:9年
- 阿库IM:
- 地址:无锡新区新梅路68号
- 传真:0510-85346300
- E-mail:mdc@iscsemi.com
相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -130V(Min)
·Good Linearity of hFE
·High Power Dissipation
APPLICATIONS
·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -130 | V |
VCEO | Collector-Emitter Voltage | -130 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -12 | A |
PC | Collector Power Dissipation @ TC=25℃ | 120 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -25mA; IB= 0 | -130 |
| V | |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -2.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -5A; VCE= -5V |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -130V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -10 | μA |
hFE-1 | DC Current Gain | IC= -2A; VCE= -5V | 55 |
| 160 |
|
hFE-2 | DC Current Gain | IC= -5A; VCE= -5V | 35 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= -10V; ftest= 1.0MHz |
| 270 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -10V |
| 60 |
| MHz |
"