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无锡固电半导体股份有限公司
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- 会员年限：9年
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询价相关产品
产品信息
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -4A
·Good Linearity of hFE
·Large Collector Current IC
·Complement to Type 2SD1270
APPLICATIONS
·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -130 | V |
VCEO | Collector-Emitter Voltage | -80 | V |
VEBO | Emitter-Base Voltage | -7 | V |
IC | Collector Current-Continuous | -5 | A |
ICM | Collector Current-Peak | -10 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 2 | W |
Collector Power Dissipation @ TC=25℃ | 40 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA ; IB= 0 | -80 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -4A; IB= -0.2A |
|
| -0.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -4A; IB= -0.2A |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V ; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V ; IC= 0 |
|
| -50 | μA |
hFE-1 | DC Current Gain | IC= -0.1A ; VCE= -2V | 45 |
|
|
|
hFE-2 | DC Current Gain | IC= -2A ; VCE= -2V | 90 |
| 260 |
|
fT | Current-Gain—Bandwidth Product | IC=-0.5A; VCE= -10V;ftest=10MHz |
| 30 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= -2.0A ,IB1= -IB2= -0.2A, |
| 0.13 |
| μs |
tstg | Storage Time |
| 0.5 |
| μs | |
tf | Fall Time |
| 0.13 |
| μs | |
u hFE-2Classifications
Q | P |
90-180 | 130-260 |