无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

500

V

V_CEO

Collector-Emitter Voltage                        

400

V

V_EBO

Emitter-Base voltage

7

V

I_C

Collector Current-Continuous

12

A

I_CM

Collector Current-Peak

25

A

I_B

Base Current-Continuous

4

A

P_C

Collector Power Dissipation

@ T_C=25℃

100

W

Collector Power Dissipation

@ T_a=25℃

2.5

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CBO

Collector-Base Breakdown Voltage                     

I_C= 1mA; I_E= 0

500

V

V_(BR)CEO

Collector-Emitter Breakdown Voltage                          

I_C= 10mA; R_BE=∞

400

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 1m A; I_C= 0

7

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 8A; I_B= 1.6A

0.8

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 8A; I_B= 1.6A

1.5

V

I_CBO

Collector Cutoff Current

V_CB= 400V ; I_E= 0

10

μA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

10

μA

h_FE-1

DC Current Gain

I_C= 1.6A; V_CE= 5V

15

50

h_FE-2

DC Current Gain

I_C= 8A; V_CE= 5V

10

h_FE-3

DC Current Gain

I_C= 10mA ; V_CE= 5V

10

f_T

Current-Gain—Bandwidth Product

I_C= 1.6A; V_CE= 10V

20

MHz

C_OB

Output Capacitance

I_E= 0; V_CB= 10V; f_test= 1.0MHz

160

pF

Switching Times

t_on

Turn-on Time

I_C= 10A, I_B1= 2A; I_B2= -4A

R_L= 20Ω; V_CC= 200V

0.5

μs

t_stg

Storage Time

2.5

μs

t_f

Fall Time

0.3

μs

L

M

N

15-30

20-40

30-50