无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                        

1400

V

V_CEO

Collector-Emitter Voltage                        

600

V

V_EBO

Emitter-Base Voltage

   5

V

I_C

Collector Current- Continuous

7

A

I_CM

CollectorCurrent- Peak

14

A

I_B

Base Current- Continuous

3.5

A

P_C

Collector Power Dissipation

@ T_C=25℃

50

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 200mA; I_C= 0

5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 1.2A

5.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 5A; I_B= 1.2A

1.5

V

I_CBO

Collector Cutoff Current

V_CB= 500V; I_E= 0

10

μA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

66

200

mA

h_FE

DC Current Gain

I_C= 1A; V_CE= 5V

8

V_ECF

C-E Diode Forward Voltage

I_F= 5A

2.0

V

f_T

Current-Gain—Bandwidth Product

I_C= 0.1A; V_CE= 10V

3

MHz

C_OB

Output Capacitance

I_E= 0; V_CB= 10V;f_test=1.0MHz

210

pF

Switching Times , Resistive load

t_stg

Storage Time

I_CP= 5A, I_B1= 1A; I_B2= -2A;

R_L= 40Ω

2.5

μs

t_f

Fall Time

0.2

μs