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无锡固电半导体股份有限公司
- 卖家积分:营业执照:已审核经营模式:生产制造商所在地区:江苏 无锡企业网站:
http://www.iscsemi.com
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- 会员年限:9年
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- 地址:无锡新区新梅路68号
- 传真:0510-85346300
- E-mail:mdc@iscsemi.com
相关产品
产品信息
iscSilicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)- MJE4340
= 120V(Min)- MJE4341
= 140V(Min)- MJE4342
= 160V(Min)- MJE4343
·Low Saturation Voltage
·Complement to Type MJE4350/4351/4352/4353
APPLICATIONS
·Designed for use in high power audio amplifier applications
and high voltage switching regulator circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT | |
VCBO | Collector- Base Voltage | MJE4340 | 100 | V |
MJE4341 | 120 | |||
MJE4342 | 140 | |||
MJE4343 | 160 | |||
VCEO | Collector-Emitter Voltage | MJE4340 | 100 | V |
MJE4341 | 120 | |||
MJE4342 | 140 | |||
MJE4343 | 160 | |||
VEBO | Emitter-Base Voltage | 7 | V | |
IC | Collector Current-Continuous | 16 | A | |
ICM | Collector Current-Peak | 20 | A | |
IB | Base Current-Continuous | 5 | A | |
PC | Collector Power Dissipation @ TC=25℃ | 125 | W | |
TJ | JunctionTemperature | 150 | ℃ | |
Tstg | StorageTemperature Range | -65~150 | ℃ |