- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分:营业执照:已审核经营模式:生产制造商所在地区:江苏 无锡企业网站:
http://www.iscsemi.com
收藏本公司 人气:203389
企业档案
- 相关证件: 
- 会员类型:
- 会员年限:9年
- 阿库IM:
- 地址:无锡新区新梅路68号
- 传真:0510-85346300
- E-mail:mdc@iscsemi.com
相关产品
产品信息
·High Current Capability
·Fast Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·Motor controls
·High frequency inverters
·General purpose power amplifiers
Absolute maximum ratings(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 120 | V |
VCEO | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 25 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation @TC=25℃ | 80 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA; IB= 0 | 80 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= 0.1mA; IE= 0 | 120 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 0.1mA; IC= 0 | 7 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 25A; IB= 2.5A |
|
| 1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 25A; IB= 2.5A |
|
| 2.0 | V |
ICBO | Collector Cutoff Current | VCB= 120V; IE= 0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC= 0 |
|
| 0.1 | mA |
hFE | DC Current Gain | IC= 25A; VCE= 5V | 20 |
|
|
|
Switching times Resistive Load | ||||||
ton | Turn-on Time | IC= 25A; IB1= -IB2= 2.5A; RL= 3Ω, PW= 20μs; Duty≤2% |
|
| 1.0 | μs |
ts | Storage Time |
|
| 2.5 | μs | |
tf | Fall Time |
|
| 0.4 | μs |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 1.55 | ℃/W |