无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-40

V

V_CEO

Collector-Emitter Voltage                        

-20

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-7

A

I_CM

Collector Current-Peak

-12

A

P_C

Total Power Dissipation

@ T_C=25℃

30

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -10mA; I_B= 0

-20

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5A; I_B= -0.16A

-0.6

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -5A; I_B= -0.16A

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -40V; I_E= 0

-50

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-50

μA

h_FE-1

DC Current Gain

I_C= -0.1A; V_CE= -2V

45

h_FE-2

DC Current Gain

I_C= -2A; V_CE= -2V

60

260

C_OB

Collector Output Capacitance

I_E= 0; V_CB= -10V; f= 1MHz

140

pF

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A; V_CE= -10V

150

MHz

Switching times

t_on

Turn-on Time

V_CC=-20V;I_C= -2A;

I_B1= -I_B2= -66mA

0.1

μs

t_stg

Storage Time

0.5

μs

t_f

Fall Time

0.1

μs

R

Q

P

60-120

90-180

130-260