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无锡固电半导体股份有限公司
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http://www.iscsemi.com
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- 会员年限：9年
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- 电话：0510-85346300
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询价相关产品
产品信息
·High Collector Current:: IC= -7A
·Low Collector Saturation Voltage
: VCE(sat)= -0.6V(Max)@IC= -5A
·High Speed Switching
APPLICATIONS
·Designed for low voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -40 | V |
VCEO | Collector-Emitter Voltage | -20 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -7 | A |
ICM | Collector Current-Peak | -12 | A |
PC | Total Power Dissipation @ TC=25℃ | 30 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA; IB= 0 | -20 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.16A |
|
| -0.6 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -5A; IB= -0.16A |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -40V; IE= 0 |
|
| -50 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -50 | μA |
hFE-1 | DC Current Gain | IC= -0.1A; VCE= -2V | 45 |
|
|
|
hFE-2 | DC Current Gain | IC= -2A; VCE= -2V | 60 |
| 260 |
|
COB | Collector Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 140 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -10V |
| 150 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | VCC=-20V;IC= -2A; IB1= -IB2= -66mA |
| 0.1 |
| μs |
tstg | Storage Time |
| 0.5 |
| μs | |
tf | Fall Time |
| 0.1 |
| μs | |
u hFE-2Classifications
R | Q | P |
60-120 | 90-180 | 130-260 |