- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
收藏本公司 人气：213818
企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 刘玲玲
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
询价相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·LowCollector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 4A
·Complement to Type 2SC1444
APPLICATIONS
·Designed for general purpose power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -60 | V |
VCEO | Collector-Emitter Voltage | -60 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -6 | A |
PC | Total Power Dissipation @ TC=25℃ | 40 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA; IB= 0 | -60 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -1mA; IE= 0 | -60 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -60V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -6V; IC= 0 |
|
| -10 | μA |
hFE | DC Current Gain | IC= -1A; VCE= -4V | 50 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -12V |
| 10 |
| MHz |
"