- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
收藏本公司 人气：203413
企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 阚丹丹
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
询价相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
·Good Linearity of hFE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SD847
APPLICATIONS
·Audio amplifier applications
·Series regulators
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -40 | V |
VCEO | Collector-Emitter Voltage | -40 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -15 | A |
IB | Base Current- Continuous | -5 | A |
PC | Collector Power Dissipation @ TC=25℃ | 80 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rthj-c | Thermal Resistance,Junction to Case | 1.56 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA; IB= 0 | -40 |
| V | |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -0.1mA; IE= 0 | -40 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -0.1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5.0A; IB= -0.5A |
|
| -0.8 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -5.0A; IB= -0.5A |
|
| -1.8 | V |
ICBO | Collector Cutoff Current | VCB= -40V; IE=0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC=0 |
|
| -10 | μA |
hFE | DC Current Gain | IC= -5A; VCE= -2V | 40 |
| 240 |
|
Switching times | ||||||
ton | Turn-on Time | IC= -5A, IB1= -IB2= -1.5A, RL= 2Ω; PW= 20μs Duty≤2% |
|
| 1.0 | μs |
tstg | Storage Time |
|
| 2.0 | μs | |
tf | Fall Time |
|
| 1.0 | μs | |