- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
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- 会员类型：
- 会员年限：9年
- 阚丹丹
- 电话：0510-85346300
- 手机：15961889150
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- 地址：无锡新区新梅路68号
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- E-mail：mdc@iscsemi.com
询价相关产品
产品信息
·High Power Dissipation-
: PC= 80W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
·Complement to Type 2SC2260
APPLICATIONS
·Designed for general purpose applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -8 | A |
IB | Base Current-Continuous | -3 | A |
PC | Collector Power Dissipation @TC=25℃ | 80 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; IB= 0 | -100 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -3A; IB= -0.3A |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V; IE= 0 |
|
| -1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= -6V; IC= 0 |
|
| -1.0 | mA |
hFE | DC Current Gain | IC= -3A; VCE= -4V | 30 |
|
|
|
fT | Current-Gain—Bandwidth Product | IE= 0.5A; VCE= -12V |
| 20 |
| MHz |
Switching times | ||||||
tr | Rise Time | IC= -3A ,RL= 4Ω, VCC=-12V IB1= -0.2A; IB2= 0.1A |
| 0.85 |
| μs |
tstg | Storage Time |
| 2.0 |
| μs | |
tf | Fall Time |
| 0.3 |
| μs | |