- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
收藏本公司 人气：209088
企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 刘玲玲
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
询价相关产品
产品信息
·Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max)@IC= 6A
·Good Linearity of hFE
·High Switching Speed
·Complement to Type 2SA1452
APPLICATIONS
·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 80 | V |
VCEO | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 12 | A |
IB | Base Current-Continuous | 2 | A |
PC | Collector Power Dissipation @ TC=25℃ | 30 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA ; IB= 0 | 80 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A; IB= 0.3A |
|
| 0.4 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 6A; IB= 0.3A |
|
| 1.2 | V |
ICBO | Collector Cutoff Current | VCB= 80V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 6V ; IC= 0 |
|
| 10 | μA |
hFE-1 | DC Current Gain | IC= 1A ; VCE= 1V | 70 |
| 240 |
|
hFE-2 | DC Current Gain | IC= 6A ; VCE= 1V | 40 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= 10V;ftest= 1MHz |
| 220 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 5V |
| 80 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | IC= 6A ,IB1= -IB2= 0.3A, VCC= 30V, RL= 5Ω |
| 0.2 |
| μs |
tstg | Storage Time |
| 1.0 |
| μs | |
tf | Fall Time |
| 0.2 |
| μs | |
u hFE-1Classifications
O | Y |
70-140 | 120-240 |