- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
收藏本公司 人气：203410
企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 阚丹丹
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
询价相关产品
产品信息
·High Breakdown Voltage-
：VCBO= 1500V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VCEO | Collector-Emitter Voltage | 600 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current- Continuous | 3.5 | A |
IB | Base Current- Continuous | 1 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 3.5 | W |
Collector Power Dissipation @ TC=25℃ | 40 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 200mA; IC= 0 | 5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC=2.2A; IB= 0.7A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC=2.2A; IB= 0.7A |
|
| 1.0 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 10 | μA |
hFE | DC Current Gain | IC= 0. 5A; VCE= 5V | 9 |
| 18 |
|
VECF | C-E Diode Forward Voltage | IF= 2.2A |
|
| 1.5 | V |
fT | Current-Gain—Bandwidth Product | IC= 0.1A; VCE= 10V |
| 3 |
| MHz |
COB | Output Capacitance | IE= 0 ; VCB= 10V;ftest=1.0MHz |
| 95 |
| pF |
tf | Fall Time | ICP= 2.2A, IB1(end)= 0.7A |
| 0.2 | 0.5 | μs |
"