无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-120

V

V_CEO

Collector-Emitter Voltage

-120

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous  

-15

A

I_B

Base Current-Continuous  

-5

A

P_C

Collector Power Dissipation

@T_C=25℃

100

W

T_j

Junction Temperature

175

℃

T_stg

Storage Temperature

-65~175

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -10mA; R_BE=∞

-120

V

V_(BR)CBO

Collector-Base Breakdown Voltage

I_C= -50μA; I_E= 0

-120

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= -1mA; I_C= 0

-5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -7A; I_B= -0.7A

-1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -7A; I_B= -0.7A

-1.8

V

I_CBO

Collector Cutoff Current

V_CB= -120V; I_E= 0

-50

μA

I_CEO

Collector Cutoff Current

V_CE= -120V; I_B= 0

-1

μA

I_EBO

Emitter Cutoff Current

V_EB= -4V; I_C= 0

-50

μA

h_FE-1

DC Current Gain

I_C= -1.5A; V_CE= -5V

35

200

h_FE-2

DC Current Gain

I_C= -15A; V_CE= -5V

7

C_OB

Output Capacitance

I_E= 0; V_CB= -10V; f= 1.0MHz

350

pF

f_T

Current-Gain—Bandwidth Product

I_C= -1A; V_CE= -10V

60

MHz

Switching Times

t_r

Rise Time

I_C= -7.5A; I_B1= -I_B2= -0.75A;

R_L= 4Ω

0.8

μs

t_stg

Storage Time

1.0

μs

t_f

Fall Time

0.8

μs