- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分：
营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 阚丹丹
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
询价相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 10 | V |
IC | Collector Current-Continuous | 15 | A |
ICM | Collector Current-Peak | 30 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation @TC=25℃ | 80 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 25mA; IB= 0 | 400 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 8A; IB= 1.6A |
|
| 0.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 8A; IB= 1.6A |
|
| 1.3 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 10V; IC= 0 |
|
| 100 | μA |
hFE | DC Current Gain | IC= 8A; VCE= 4V | 10 |
| 30 |
|
COB | Output Capacitance | IE= 0; VCB= 10V; f= 1MHz |
| 85 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= -1.5A; VCE= 12V |
| 10 |
| MHz |
Switching Times | ||||||
ton | Turn-On Time | IC= 8A; IB1= 0.8A; IB2= -1.6A; VCC= 200V; RL= 25Ω |
|
| 1.0 | μs |
tstg | Storage Time |
|
| 3.0 | μs | |
tf | Fall Time |
|
| 0.5 | μs | |