无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

500

V

V_CEO

Collector-Emitter Voltage

350

V

V_EBO

Emitter-Base Voltage

8

V

I_C

Collector Current- Continuous

10

A

I_CM

Collector Current-Peak

16

A

I_B

Base Current

3

A

P_C

Collector Power Dissipation

@T_C=25℃

175

W

T_j

Junction Temperature

200

℃

T_stg

StorageTemperature Range

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

1.0

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 0.2A; I_B= 0; L= 10mH

350

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 3A; I_B= 60mA

1.5

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 6 A; I_B= 120mA

1.7

V

V_CE(sat)-3

Collector-Emitter Saturation Voltage

I_C= 10 A; I_B= 300mA

2.7

V

V_BE(sat)-1

Base-Emitter Saturation Voltage

I_C= 6 A; I_B= 120mA

2.2

V

V_BE(sat)-2

Base-Emitter Saturation Voltage

I_C= 10 A; I_B= 300mA

3.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= 10A ; V_CE= 6V

2.5

V

I_CER

Collector Cutoff Current

V_CER= RatedV_CER;R_BE= 100Ω

1.0

mA

I_CBO

Collector Cutoff Current

V_CB= RatedV_CBO; I_E= 0

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 6V; I_C= 0

40

mA

h_FE-1

DC Current Gain

I_C= 3A; V_CE= 6V

300

h_FE-2

DC Current Gain

I_C= 6A; V_CE= 6V

150

2000

h_FE-3

DC Current Gain

I_C= 10A; V_CE= 6V

50

V_ECF

C-E Diode Forward Voltage

I_F= 10A

3.5

V

C_OB

Output Capacitance

I_E= 0; V_CB= 10V; f= 100kHz

165

pF

Switching Times

t_s

Storage Time

V_CC= 12V; I_C= 6A,

I_B1= -I_B2= 0.3A

15

μs

t_f

Fall Time

15

μs