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无锡固电半导体股份有限公司
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http://www.iscsemi.com
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- 会员年限：9年
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- 电话：0510-85346300
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询价相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
·Collector Power Dissipation-
: PC=40W@ TC= 25℃
·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@ IC= -4A
·Complement to Type 2SD1363
APPLICATIONS
·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -70 | V |
VCEO | Collector-Emitter Voltage | -50 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -7 | A |
IB | Base Current-Continuous | -1 | A |
PC | Collector Power Dissipation @Ta=25℃ | 1.5 | W |
Collector Power Dissipation @TC=25℃ | 40 | ||
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; IB= 0 | -50 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -0.4 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -1.2 | V |
ICBO | Collector Cutoff Current | VCB= -70V; IE= 0 |
|
| -30 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -50 | μA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -1V | 70 |
| 240 |
|
hFE-2 | DC Current Gain | IC= -4A; VCE= -1V | 30 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= -10V; ftest= 1MHz |
| 250 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -4V |
| 10 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | VCC=-30V, RL= 10Ω, IB1= -IB2= -0.3A, |
| 0.2 |
| μs |
tstg | Storage Time |
| 2.5 |
| μs | |
tf | Fall Time |
| 0.5 |
| μs | |
u hFE-1Classifications
O | Y |
70-140 | 120-240 |