无锡固电半导体股份有限公司

SYMBOL

PARAMETER

MAX

UNIT

V_CES

Collector- Emitter

Voltage(V_BE= 0)                        

BUS13

850

V

BUS13A

1000

V_CEO

Collector-Emitter Voltage                        

BUS13

400

V

BUS13A

450

V_EBO

Emitter-Base Voltage

9

V

I_C

Collector Current-Continuous

15

A

I_CM

Collector Current-Peak t_p< 2ms

30

A

I_B

Base Current-Continuous

6

A

I_BM

Base Current-Peak t_p< 2ms

9

A

P_C

Collector Power Dissipation

@T_C=25℃

175

W

T_j

Junction Temperature

200

℃

T_stg

StorageTemperature Range

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

1.0

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

BUS13

I_C= 0.1A ; I_B= 0; L= 25mH

400

V

BUS13A

450

V_CE(sat)

Collector-Emitter Saturation Voltage

BUS13

I_C= 10A; I_B= 2A

1.5

V

BUS13A

I_C= 8A; I_B= 1.6A

1.5

V_BE(sat)

Base-Emitter Saturation Voltage

BUS13

I_C= 10A; I_B= 2A

1.6

V

BUS13A

I_C= 8A; I_B= 1.6A

1.6

I_CES

Collector Cutoff Current

V_CE=V_CESMmax; V_BE= 0

V_CE= V_CESMmax;V_BE= 0;T_J= 125℃

1

4

mA

I_EBO

Emitter Cutoff Current

V_EB= 9V; I_C= 0

10

mA

h_FE

DC Current Gain

I_C= 1.5A ; V_CE= 5V

15

50

Switching Times, Resistive Load

t_on

Turn-On Time

For BUS13

I_C= 10A ;I_B1= -I_B2= 2A

For BUS13A

I_C= 8A ;I_B1= -I_B2= 1.6A

1.0

μs

t_stg

Storage Time

4.0

μs

t_f

Fall Time

0.8

μs