- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 刘玲玲
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
询价相关产品
产品信息
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 4A
·Wide Area of Safe Operation
·Complement to Type 2SB827
APPLICATIONS
·Designed for universal high current switching as solenoid
driving, high speed inverter and converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 50 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 7 | A |
ICP | Collector Current-Pulse | 14 | A |
PC | Collector Power Dissipation @ TC=25℃ | 60 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT | |||
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 1mA ; RBE=∞ | 50 |
|
| V | |||
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= 1mA ; IE= 0 | 60 |
|
| V | |||
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= 1mA ; IC= 0 | 6 |
|
| V | |||
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4A; IB= 0.4A |
|
| 0.4 | V | |||
ICBO | Collector Cutoff Current | VCB= 40V; IE= 0 |
|
| 100 | μA | |||
IEBO | Emitter Cutoff Current | VEB= 4V; IC=0 |
|
| 100 | μA | |||
hFE-1 | DC Current Gain | IC= 1A; VCE= 2V | 70 |
| 280 |
| |||
hFE-2 | DC Current Gain | IC= 5A; VCE= 2V | 30 |
|
|
| |||
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 5V | 10 |
| MHz | ||||
Switching times | |||||||||
ton | Turn-on Time | IC= 2A; IB1= -IB2= 0.2A RL= 10Ω;PW=20μs; VCC= 20V |
| 0.2 |
| μs | |||
tstg | Storage Time |
| 0.9 |
| μs | ||||
tf | Fall Time |
| 0.3 |
| μs | ||||
u hFE-1Classifications
Q | R | S |
70-140 | 100-200 | 140-280 |