- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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- 会员类型：
- 会员年限：9年
- 阚丹丹
- 电话：0510-85346300
- 手机：15961889150
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- 地址：无锡新区新梅路68号
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询价相关产品
产品信息
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·HighDC Current Gain-
: hFE=1000(Min)@ (VCE= -3V, IC= -2A)
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -7 | V |
IC | Collector Current-Continuous | -8 | A |
ICM | Collector Current-Peak | -10 | A |
PC | Collector Power Dissipation @Ta=25℃ | 2 | W |
Collector Power Dissipation @TC=25℃ | 40 | ||
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -5mA; IB= 0 | -100 |
| V | |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -50μA; IE= 0 | -100 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -3A; IB= -6mA |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -100V ; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -3 | mA |
hFE | DC Current Gain | IC= -2A ; VCE= -3V | 1000 |
| 20000 |
|
COB | Output Capacitance | IE= 0; VCB= -10V; ftest= 1MHz |
| 90 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= 0.5A; VCE= -5V; ftest= 10MHz |
| 12 |
| MHz |