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无锡固电半导体股份有限公司
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http://www.iscsemi.com
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产品分类
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
询价
产品信息
Features
·With TO-220AB insulated package
·Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | MIN | UNIT |
VDRM | Repetitive peak off-state voltage | 600 | V |
VRRM | Repetitive peak reverse voltage | 600 | V |
IT(RMS) | RMS on-state current (full sine wave)Tj=105℃ | 8 | A |
ITSM | Non-repetitive peak on-state current tp=20ms | 80 | A |
Tj | Operating junction temperature | 110 | ℃ |
Tstg | Storage temperature | -45~150 | ℃ |
Rth(j-c) | Thermal resistance, junction to case | 2.5 | ℃/W |
Rth(j-a) | Thermal resistance, junction to ambient | 60 | ℃/W |
ELECTRICAL CHARACTERISTICS (TC=25℃unless otherwise specified)
SYMBOL | PARAMETER | CONDITIONS | MAX | UNIT | |
IRRM | Repetitive peak reverse current | VR=VRRM, VR=VRRM, Tj=110℃ | 0.01 0.5 | mA | |
IDRM | Repetitive peak off-state current | VD=VDRM, VD=VDRM, Tj=110℃ | 0.01 0.5 | mA | |
IGT | Gate trigger current | Ⅰ | VD=12V; RL= 30Ω | 25 | mA |
Ⅱ | 25 | ||||
Ⅲ | 25 | ||||
Ⅳ | 50 | ||||
IH | Holding current | IGT= 0.1A, Gate Open | 25 | mA | |
VGT | Gate trigger voltage all quadrant | VD=12V; RL= 30Ω | 1.3 | V | |
VTM | On-state voltage | IT= 11A; tp= 380μs | 1.55 | V | |