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DESCRIPTION·Collector–Emitter Breakdown Voltage—: V(BR)CEO= 100V·DC Current Gain—: hFE= 750(Min) @ IC=
1.5 A·Complement to Type BD682APPLICATIONS·Designed for use as output devices in complementarygeneral-purpose amplifierapplications.ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINMAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA; IB= 0100 VVCE(sat)Collector-Emitter Saturation VoltageIC=
1.5A; IB= 30mA 2.5VVBE(on)Base-Emitter On VoltageIC=
1.5A;VCE= 3V 2.5VICEOCollector Cutoff CurrentVCE= 100V;IB= 0 0.5mAICBOCollector Cutoff CurrentVCB= 100V;IE= 0VCB= 100V;IE= 0;TC= 100℃ 0.22.0mAIEBOEmitter Cutoff CurrentVEB= 5V; IC= 0 2.0mAhFEDC Current GainIC=
1.5 A ; VCE= 3V750
1.5 A·Complement to Type BD682APPLICATIONS·Designed for use as output devices in complementarygeneral-purpose amplifierapplications.ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINMAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 50mA; IB= 0100 VVCE(sat)Collector-Emitter Saturation VoltageIC=
1.5A; IB= 30mA 2.5VVBE(on)Base-Emitter On VoltageIC=
1.5A;VCE= 3V 2.5VICEOCollector Cutoff CurrentVCE= 100V;IB= 0 0.5mAICBOCollector Cutoff CurrentVCB= 100V;IE= 0VCB= 100V;IE= 0;TC= 100℃ 0.22.0mAIEBOEmitter Cutoff CurrentVEB= 5V; IC= 0 2.0mAhFEDC Current GainIC=
1.5 A ; VCE= 3V750