无锡固电半导体股份有限公司

9年

无锡固电半导体股份有限公司

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无锡固电ISC 供应2SA1261三极管
无锡固电ISC 供应2SA1261三极管
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无锡固电ISC 供应2SA1261三极管

是否提供加工定制:

品牌/商标:

ISC

型号/规格:

2SA1261

应用范围:

功率

材料:

硅(Si)

极性:

PNP型

击穿电压VCBO:

100(V)

集电极允许电流ICM:

10(A)

集电极耗散功率PCM:

60(W)

产品信息

DESCRIPTION                                             

·Low Collector Saturation Voltage-

: VCE(sat)= -0.6V(Max.)@IC= -5A

·Fast Switching Speed

·Complement to Type 2SC3157

 

 

APPLICATIONS

·Developed for high-voltage high-speed switching, and is

ideal for use as a driver in devices such as switching reg-

lators, DC/DC converters, and high frequency power am-

plifiers.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

-100

V

VCEO

Collector-Emitter Voltage                        

-100

V

VEBO

Emitter-Base Voltage

-7.0

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-20

A

IB

Base Current-Continuous

-3.5

A

PC

Collector Power Dissipation

@ Ta=25

1.5

W

Collector Power Dissipation

@ TC=25

60

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

 

ELECTRICAL CHARACTERISTICS

 

TC=25unless otherwise specified

 

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -5.0A; IB= -0.5A, L=1mH

-100

 

V

VCEX(SUS)-1

Collector-Emitter Sustaining Voltage

IC= -5.0A ; IB1=-IB2= -0.5A,

VBE(OFF)=5.0V, L=180μH,clamped

-100

 

V

VCEX(SUS)-2

Collector-Emitter Sustaining Voltage

IC= -10A ; IB1= -1.0A; IB2= -0.5A,

VBE(OFF)= 5.0V, L= 180μH,clamped

-100

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5.0A; IB= -0.5A

 

-0.6

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -5.0A; IB= -0.5A

 

-1.5

V

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

 

-10

μA

ICER

Collector Cutoff Current

VCE= -100V; RBE= 51Ω,Ta=125

 

-1.0

mA

ICEX

Collector Cutoff Current

VCE= -100V; VBE(off)= -1.5V

VCE= -100V; VBE(off)= -1.5V, Ta=125

 

-10

-1.0

μA

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

 

-10

μA

hFE-1

DC Current Gain

IC= -0.5A; VCE= -5V

40

200

 

hFE-2

DC Current Gain

IC= -3.0A; VCE= -5V

40

200

 

hFE-3

DC Current Gain

IC= -5.0A; VCE= -5V

20

 

 

Switching times

ton

Turn-on Time

IC= -5.0A, RL= 10Ω,

IB1= -IB2= -0.5A, VCC-50V

 

0.5

μs

tstg

Storage Time

 

1.5

μs

tf

Fall Time

 

0.5

μs

 

 

 

u hFE-2Classifications

 

M

L

K

40-80

60-120

100-200

 

 

 

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