- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 阚丹丹
- 电话：0510-85346300
- 手机：15961889150
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- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
询价相关产品
产品信息
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC= 2A
·High Switching Speed
APPLICATIONS
·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 300 | V |
VCEO | Collector-Emitter Voltage | 180 | V |
VEBO | Emitter-Base Voltage | 10 | V |
IC | Collector Current-Continuous | 6 | A |
IB | Base Current | 3 | A |
PC | Collector Power Dissipation@TC=25℃ | 87.5 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 2.0 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA; IB= 0 | 180 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= 3mA; IE= 0 | 300 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 2A; IB= 0.25A |
|
| 0.6 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 2A; IB= 0.25A |
|
| 1.2 | V |
ICES | Collector Cutoff Current | VCE= 250V; VBE= 0 |
|
| 1.0 | mA |
ICEO | Collector Cutoff Current | VCE= 180V; IB= 0 |
|
| 1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= 10V; IC= 0 |
|
| 1.0 | mA |
hFE | DC Current Gain | IC= 2A; VCE= 4V | 15 |
| 100 |
|
fT | Current Gain-Bandwidth Product | IC= 0.5A; VCE= 15V; f=10MHz | 10 |
|
| MHz |
Switching Times | ||||||
ton | Turn-On Time | IC= 5A; IB= 1A |
|
| 0.5 | μs |
toff | Turn-Off Time | IC= 5A; IB1= 1A; IB2= -0.5A |
|
| 2.0 | μs |
u hFEClassifications
A | B | C |
15-45 | 30-90 | 75-100 |