- 非IC关键词
无锡固电半导体股份有限公司
- 卖家积分:营业执照:已审核经营模式:生产制造商所在地区:江苏 无锡企业网站:
http://www.iscsemi.com
收藏本公司 人气:203400
企业档案
- 相关证件: 
- 会员类型:
- 会员年限:9年
- 阿库IM:
- 地址:无锡新区新梅路68号
- 传真:0510-85346300
- E-mail:mdc@iscsemi.com
相关产品
产品信息
DESCRIPTION
·DC Current Gain-
: hFE= 20-100@IC= 10A
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 15A
APPLICATIONS
·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 170 | V |
VCEO | Collector-Emitter Voltage | 160 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 30 | A |
IB | Base Current-Continuous | 7.5 | A |
PC | Collector Power Dissipation @TC=25℃ | 175 | W |
TJ | Junction Temperature | 200 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 0.875 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 200mA ; IB= 0 | 160 |
|
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 15A; IB= 1.5A |
|
| 1.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 30A; IB= 7.5A |
|
| 4.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 30A; IB= 7.5A |
|
| 2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= 10A ; VCE= 4V |
|
| 1.5 | V |
ICEO | Collector Cutoff Current | VCE= 160V; IB= 0 |
|
| 2.0 | mA |
ICBO | Collector Cutoff Current | VCB= 170V; IE= 0 |
|
| 1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 1.0 | mA |
hFE-1 | DC Current Gain | IC= 10A ; VCE= 4V | 20 |
| 100 |
|
hFE-2 | DC Current Gain | IC= 30A ; VCE= 4V | 4 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 1A ; VCE= 10V ;ftest= 1MHz |
| 30 |
| MHz |
"