无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-100

V

V_CEO

Collector-Emitter Voltage

-80

V

V_EBO

Emitter-Base Voltage

-6

V

I_C

Collector Current-Continuous

-25

A

I_CM

Collector Current-Peak

-50

A

I_B

Base Current-Continuous

-10

A

P_C

Collector Power Dissipation

@T_C=25℃

200

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

0.875

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= -50mA ; I_B= 0

-80

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= -10A; I_B= -1A

-1.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= -25A; I_B= -2.5A

-1.8

V

V_BE(sat)-1

Base-Emitter Saturation Voltage

I_C= -10A; I_B= -1A

-1.8

V

V_BE(sat)-2

Base-Emitter Saturation Voltage

I_C= -25A; I_B= -2.5A

-2.5

V

I_CEO

Collector Cutoff Current

V_CE= -40V; I_B= 0

-50

μA

I_CBO

Collector Cutoff Current

V_CB= -100V; I_E= 0

-10

μA

I_EBO

Emitter Cutoff Current

V_EB= -6V; I_C= 0

-0.1

mA

h_FE-1

DC Current Gain

I_C= -0.5A ; V_CE= -2V

30

h_FE-2

DC Current Gain

I_C= -10A ; V_CE= -2V

30

120

h_FE-3

DC Current Gain

I_C= -25A ; V_CE= -2V

12

f_T

Current-Gain—Bandwidth Product

I_C= -1A ; V_CE= -10V ;f_test= 10MHz

40

MHz

C_OB

Output Capacitance

I_E= 0; V_CB= -10V ;f_test= 0.1MHz

700

pF

Switching Times

t_r

Rise Time

V_CC= -80V; I_C= -10A; I_B1= -I_B2= -1A,

V_BE(off)= -6V

0.3

μs

t_stg

Storage Time

2.0

μs

t_f

Fall Time

0.4

μs