- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 阚丹丹
- 电话：0510-85346300
- 手机：15961889150
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询价相关产品
产品信息
·High Voltage: VCEV= 400V(Min)
·Fast Switching Speed-
: tf= 0.5μs(Max)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 6A
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 400 | V |
VCEV | Collector-Emitter Voltage | 400 | V |
VCEO | Collector-Emitter Voltage | 200 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 7 | A |
ICM | Collector Current-Peak | 10 | A |
IB | Base Current | 4 | A |
PC | Collector Power Dissipation @ TC=25℃ | 60 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 100mA ;IB= 0 | 200 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A; IB= 1.2A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 6A; IB= 1.2A |
|
| 1.5 | V |
hFE | DC Current Gain | IC= 2A; VCE= 5V; |
| 15 |
|
|
ICEV | Collector Cutoff Current | VCE= 400V; VBE= -1.5V |
|
| 15 | mA |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
|
| 400 | mA |
fT | Current-Gain—Bandwidth Product | IC= 0.5A ; VCE= 10V, ftest= 1MHz | 10 |
|
| MHz |
VECF | C-E Diode Forward Voltage | IF= 5A |
|
| 1.5 | V |
tf | Fall Time | IC= 6A; IB1= -IB2= 1.2A, VCC= 40V |
|
| 0.5 | μs |
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