- 非IC关键词
无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 阚丹丹
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
询价相关产品
产品信息
DESCRIPTION
·DC Current Gain-
: hFE= 30-90@IC= 5A
·Wide Area of Safe Operation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
·Complement to Type 2N5623
APPLICATIONS
·Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 100 | V |
VCEO | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 10 | A |
PC | Collector Power Dissipation@TC=25℃ | 100 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 1.5 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 50mA ; IB= 0 | 80 | V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 10A; IB= 1A |
| 1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 10A; IB= 1A |
| 2.2 | V |
ICEO | Collector Cutoff Current | VCE= 80V; IB= 0 |
| 1.0 | mA |
ICBO | Collector Cutoff Current | VCB= 100V; IE= 0 |
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
| 0.1 | mA |
hFE | DC Current Gain | IC= 5A ; VCE= 5V | 30 | 90 |
|
fT | Current-Gain—Bandwidth Product | IC= 1A ; VCE= 10V | 40 |
| MHz |