无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

450

V

V_CEO

Collector-Emitter Voltage

350

V

V_EBO

Emitter-Base Voltage

9.0

V

I_C

Collector Current-Continuous

10

A

I_CM

Collector Current-Peak

16

A

I_B

Base Current-Continuous

5

A

P_C

Collector Power Dissipation@T_C=25℃

125

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

1.4

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 200mA; I_B= 0

350

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 1A

1.5

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 10A; I_B= 5A

3.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 5A; I_B= 1A

1.5

V

I_CEV

Collector Cutoff Current

V_CEV= Rated Value; V_BE(off)=1.5V

V_CEV= Rated Value; V_BE(off)=1.5V;T_C=100℃

0.5

2.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 9.0V; I_C= 0

0.1

mA

h_FE

DC Current Gain

I_C= 5A ; V_CE= 3V

7

35

f_T

Current Gain-Bandwidth Product

I_C= 1A ; V_CE= 10V; f_test=10MHz

12.5

50

MHz

C_OB

Output Capacitance

I_E= 0; V_CB= 10V; f_test=1.0MHz

75

250

pF

Switching times-Resistive Load

t_d

Delay Time

I_C= 5A, I_B1= -I_B2= 1A, V_CC= 150V; R= 30Ω

t_p=100μs; Duty Cycle≤2.0%

0.05

μs

t_r

Rise Time

0.5

μs

t_s

Storage Time

2.0

μs

t_f

Fall Time

0.5

μs