无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-120

V

V_CEO

Collector-Emitter Voltage                        

-120

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-30

A

I_B

Base Current-Continuous

-10

A

P_C

Collector Power Dissipation

@ T_C=25℃

150

W

T_J

JunctionTemperature

175

℃

T_stg

StorageTemperature Range

-65~175

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -10mA; R_BE=∞

-120

V

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= -50μA; I_E= 0

-120

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= -1mA ; I_C= 0

-5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -15A; I_B= -1.5A

-1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -15A; I_B= -1.5A

-2.0

V

I_CBO

Collector Cutoff Current

V_CB= -120V ; I_E= 0

-50

μA

I_CEO

Collector Cutoff Current

V_CE= -120V ; I_E= 0

-1

mA

I_EBO

Emitter Cutoff Current

V_EB= -4V; I_C= 0

-50

μA

h_FE-1

DC Current Gain

I_C= -3A ; V_CE= -5V

35

200

h_FE-2

DC Current Gain

I_C= -30A ; V_CE= -5V

7

C_OB

Output Capacitance

I_E= 0; V_CB= -10V; f= 1.0MHz

1000

pF

f_T

Current-Gain—Bandwidth Product

I_C= -2A ; V_CE= -10V

60

MHz

Switching Times

t_r

Rise Time

I_C= -15A; I_B1= -I_B2= -1.5A;

R_L=2Ω

0.10

μs

t_stg

Storage Time

0.10

μs

t_f

Fall Time

0.10

μs