无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

BD202

-60

V

BD204

-60

V_CEO

Collector-Emitter Voltage

BD202

-45

V

BD204

-60

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-8

A

I_CM

Collector Current-Peak t_p≤10ms

-12

A

I_CSM

Collector Current-Peak t_p≤2ms

-25

A

I_B

Base Current

-3

A

P_C

Collector Power Dissipation

@ T_C=25℃

60

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

BD202

I_C= -0.2A ;I_B= 0

-45

V

BD204

-60

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= -1mA ;I_E= 0

-60

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage                     

I_E= -1mA ;I_C= 0

-5

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= -3A; I_B= -0.3A

-1.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= -6A; I_B= -0.6A

-1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -6A; I_B= -0.6A

-2.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= -3A ; V_CE= -2V

-1.5

V

I_CEO

Collector Cutoff Current

V_CE= -30V; I_B= 0

-0.2

mA

I_CBO

Collector Cutoff Current

V_CB= -40V;I_E= 0; T_J= 150℃

-1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C=0

-0.5

mA

h_FE

DC Current Gain

BD202

I_C= -3A ; V_CE= -2V

30

BD204

I_C= -2A ; V_CE= -2V

f_T

Current-Gain—Bandwidth Product

I_C= -0.3A ; V_CE= -3V, f_test= 1.0MHz

7.0

MHz

Switching Times

t_on

Turn-On Time

I_C= -2A; I_B1= -I_B2= -0.2A

1

μs

t_off

Turn-Off Time

2

μs