无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CEV

Collector-Emitter Voltage

1000

V

V_CEX(SUS)

Collector-Emitter Voltage

550

V

V_CEO(SUS)

Collector-Emitter Voltage

500

V

V_EBO

Emitter-Base Voltage

8

V

I_C

Collector Current-Continuous

10

A

I_CM

Collector Current-Peak

10

A

I_B

Base Current-Continuous

5

A

P_C

Collector Power Dissipation@T_C=25℃

150

W

T_J

Junction Temperature

175

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

1.0

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 200mA; I_B= 0

500

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 1A

1.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 10A; I_B= 3A

3.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 5A; I_B= 1A

1.3

V

I_CEV

Collector Cutoff Current

V_CE= 1000V; V_BE= -1.5V

V_CE= 1000V; V_BE= -1.5V; T_C=100℃

0.1

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 8V; I_C= 0

2.0

mA

h_FE

DC Current Gain

I_C= 5A ; V_CE= 3V

8

40

f_T

Current Gain-Bandwidth Product

I_C= 0.2A ; V_CE= 10V

15

60

MHz

C_OB

Output Capacitance

I_E= 0; V_CB= 10V; f= 0.1MHz

50

250

pF

Switching times-Resistive Load

t_d

Delay Time

I_C= 5A; I_B1= -I_B2= 1A; V_CC= 250V;

V_BE= -6V; t_p= 20μs

0.1

μs

t_r

Rise Time

0.4

μs

t_s

Storage Time

3.0

μs

t_f

Fall Time

0.4

μs