无锡固电半导体股份有限公司

SYMBOL

PARAMETER

VALUE

UNIT

V_CES

Collector- Emitter Voltage(V_BE= 0)                        

1500

V

V_CEO

Collector-Emitter Voltage                         

700

V

V_EBO

Emitter-Base Voltage

7.5

V

I_C

Collector Current- Continuous

8

A

I_CM

Collector Current-Peak

15

A

I_B

Base Current- Continuous

4

A

I_BM

Base Current-Peak

6

A

P_C

Collector Power Dissipation

@ T_C=25℃

45

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

2.8

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA ; I_B= 0,L= 25mH

700

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 600mA; I_C= 0

7.5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 4.5A; I_B= 1.12A

1.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 4.5A; I_B= 1.7A

1.1

V

I_CES

Collector Cutoff Current

V_CE= 1500V ; V_BE= 0

V_CE= 1500V ; V_BE= 0; T_C=125℃

1.0

2.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 7.5V ; I_C= 0

227

mA

h_FE-1

DC Current Gain

I_C= 1A ; V_CE= 5V

13

h_FE-2

DC Current Gain

I_C= 4.5A ; V_CE= 1V

4

7

V_ECF

C-E Diode Forward Voltage

I_F= 4.5A

2.0

V

C_OB

Output Capacitance

I_E= 0; V_CB= 10V; f_test= 1MHz

80

pF

Switching times

t_stg

Storage Time

I_C= 4.5A , I_B(end)= 1.1A; L_B= 6μH

-V_BB= 4V; (-dI_B/dt= 0.6A/μs)

6.0

μs

t_f

Fall Time

0.6

μs