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无锡固电半导体股份有限公司
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产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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产品信息
供应2SD1266三极管.TO-220Fa,有意者请联系!DESCRIPTION
·Low Collector Saturation Voltage: VCE(sat)=
1.2V(Max)@ IC= 3A·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min)·Good Linearity of hFE·Complement to Type 2SB941
APPLICATIONS·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
60VVCEOCollector-Emitter Voltage
60VVEBOEmitter-Base Voltage6VICCollector Current-Continuous3AICMCollector Current-Peak5APCCollector Power Dissipation@ TC=25℃35WCollector Power Dissipation@ Ta=25℃2TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 30mA ; IB= 060
VVCE(sat)Collector-Emitter Saturation VoltageIC= 3A; IB= 0.375A
1.2VVBE(on) Base-Emitter On VoltageIC= 3A; VCE= 4V
1.8VICESCollector Cutoff CurrentVCE= 60V; VBE= 0
0.2mAICEOCollector Cutoff CurrentVCE= 30V; IB= 0
0.3mAIEBOEmitter Cutoff CurrentVEB= 6V; IC= 0
1.0mAhFE-1DC Current GainIC= 1A ; VCE= 4V70 250 hFE-2DC Current GainIC= 3A ; VCE= 4V10
fTCurrent-Gain—Bandwidth ProductIC= 0.5A ; VCE= 10V; f= 10MHz 30 MHzSwitching timestonTurn-on TimeIC= 1A ; IB1= -IB2= 0.1A;VCC=50V 0.5 μststgStorage Time 2.5 μstfFall Time 0.4 μs
·Low Collector Saturation Voltage: VCE(sat)=
1.2V(Max)@ IC= 3A·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min)·Good Linearity of hFE·Complement to Type 2SB941
APPLICATIONS·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
60VVCEOCollector-Emitter Voltage
60VVEBOEmitter-Base Voltage6VICCollector Current-Continuous3AICMCollector Current-Peak5APCCollector Power Dissipation@ TC=25℃35WCollector Power Dissipation@ Ta=25℃2TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 30mA ; IB= 060
VVCE(sat)Collector-Emitter Saturation VoltageIC= 3A; IB= 0.375A
1.2VVBE(on) Base-Emitter On VoltageIC= 3A; VCE= 4V
1.8VICESCollector Cutoff CurrentVCE= 60V; VBE= 0
0.2mAICEOCollector Cutoff CurrentVCE= 30V; IB= 0
0.3mAIEBOEmitter Cutoff CurrentVEB= 6V; IC= 0
1.0mAhFE-1DC Current GainIC= 1A ; VCE= 4V70 250 hFE-2DC Current GainIC= 3A ; VCE= 4V10
fTCurrent-Gain—Bandwidth ProductIC= 0.5A ; VCE= 10V; f= 10MHz 30 MHzSwitching timestonTurn-on TimeIC= 1A ; IB1= -IB2= 0.1A;VCC=50V 0.5 μststgStorage Time 2.5 μstfFall Time 0.4 μs