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无锡固电半导体股份有限公司
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营业执照：已审核经营模式：生产制造商所在地区：江苏 无锡企业网站：
http://www.iscsemi.com
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企业档案
- 相关证件：
- 会员类型：
- 会员年限：9年
- 潘小姐
- 电话：0510-85346300
- 手机：15961889150
- 阿库IM：
- 地址：无锡新区新梅路68号
- 传真：0510-85346300
- E-mail：mdc@iscsemi.com
产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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产品信息
TO-3PN供应2SD1402三极管,有意者请联系！DESCRIPTION
·High Breakdown Voltage- : VCBO= 1500V (Min)·High Switching Speed
APPLICATIONS·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
1500VVCEOCollector-Emitter Voltage
800VVEBOEmitter-Base Voltage7VICCollector Current- Continuous5AICPCollector Current-Pulse16APCCollector Power Dissipation@ TC= 25℃120WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CBOCollector-Base Breakdown Voltage
IC= 5mA; IE= 01500
VV(BR)CEOCollector-Emitter Breakdown Voltage
IC= 100mA; RBE=∞800
VV(BR)EBOEmitter-Base Breakdown VoltageIE= 200mA; IC= 07
VVCE(sat)Collector-Emitter Saturation VoltageIC= 4A; IB= 0.8A
5.0VVBE(sat)Base-Emitter Saturation VoltageIC= 4A; IB= 0.8A
1.5VICBOCollector Cutoff CurrentVCB= 800V; IE= 0
10μAIEBOEmitter Cutoff CurrentVEB= 5V; IC= 0
1.0mAhFEDC Current GainIC= 1A; VCE= 5V8
fTCurrent-Gain—Bandwidth ProductIC= 1A; VCE= 10V 3 MHztfFall TimeIC= 4A, IB1= 0.8A, IB2= -1.6A;RL= 50Ω; VCC= 200V
0.7μs
·High Breakdown Voltage- : VCBO= 1500V (Min)·High Switching Speed
APPLICATIONS·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
1500VVCEOCollector-Emitter Voltage
800VVEBOEmitter-Base Voltage7VICCollector Current- Continuous5AICPCollector Current-Pulse16APCCollector Power Dissipation@ TC= 25℃120WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CBOCollector-Base Breakdown Voltage
IC= 5mA; IE= 01500
VV(BR)CEOCollector-Emitter Breakdown Voltage
IC= 100mA; RBE=∞800
VV(BR)EBOEmitter-Base Breakdown VoltageIE= 200mA; IC= 07
VVCE(sat)Collector-Emitter Saturation VoltageIC= 4A; IB= 0.8A
5.0VVBE(sat)Base-Emitter Saturation VoltageIC= 4A; IB= 0.8A
1.5VICBOCollector Cutoff CurrentVCB= 800V; IE= 0
10μAIEBOEmitter Cutoff CurrentVEB= 5V; IC= 0
1.0mAhFEDC Current GainIC= 1A; VCE= 5V8
fTCurrent-Gain—Bandwidth ProductIC= 1A; VCE= 10V 3 MHztfFall TimeIC= 4A, IB1= 0.8A, IB2= -1.6A;RL= 50Ω; VCC= 200V
0.7μs