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无锡固电半导体股份有限公司
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产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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供应2SD560三极管TO-220DESCRIPTION
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)·High DC Current Gain : hFE= 2000(Min) @IC=
3.0A·Low Saturation Voltage·Complement to Type 2SB601 APPLICATIONS·Designed for low frequency power amplifiers and low speedswitching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
150VVCEOCollector-Emitter Voltage
100VVEBOEmitter-Base Voltage7VICCollector Current-Continuous5AICPCollector Current-Peak8AIBBase Current-Continuous 0.5APCCollector Power Dissipation@ Ta=25℃1.5WCollector Power Dissipation@ TC=25℃30TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 3A; L= 1mH,IB= 3mA100
VVCE(sat)Collector-Emitter Saturation VoltageIC= 3A; IB= 3mA
1.5VVBE(sat)Base-Emitter Saturation VoltageIC= 3A; IB= 3mA
2.0VICBOCollector Cutoff CurrentVCB= 100V; IE=0
1μAIEBOEmitter Cutoff CurrentVEB= 5V; IC=0
3mAhFE-1DC Current GainIC= 3A ; VCE= 2V2000 15000 hFE-2DC Current GainIC= 5A ; VCE= 2V500
Switching timestonTurn-on TimeIC= 3A , IB1= -IB2= 3mARL= 16.7Ω; VCC≈50V 0.5 μststgStorage Time 1.0 μstfFall Time 1.0 μs
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)·High DC Current Gain : hFE= 2000(Min) @IC=
3.0A·Low Saturation Voltage·Complement to Type 2SB601 APPLICATIONS·Designed for low frequency power amplifiers and low speedswitching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
150VVCEOCollector-Emitter Voltage
100VVEBOEmitter-Base Voltage7VICCollector Current-Continuous5AICPCollector Current-Peak8AIBBase Current-Continuous 0.5APCCollector Power Dissipation@ Ta=25℃1.5WCollector Power Dissipation@ TC=25℃30TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 3A; L= 1mH,IB= 3mA100
VVCE(sat)Collector-Emitter Saturation VoltageIC= 3A; IB= 3mA
1.5VVBE(sat)Base-Emitter Saturation VoltageIC= 3A; IB= 3mA
2.0VICBOCollector Cutoff CurrentVCB= 100V; IE=0
1μAIEBOEmitter Cutoff CurrentVEB= 5V; IC=0
3mAhFE-1DC Current GainIC= 3A ; VCE= 2V2000 15000 hFE-2DC Current GainIC= 5A ; VCE= 2V500
Switching timestonTurn-on TimeIC= 3A , IB1= -IB2= 3mARL= 16.7Ω; VCC≈50V 0.5 μststgStorage Time 1.0 μstfFall Time 1.0 μs