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无锡固电半导体股份有限公司
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产品分类
优势库存(800)普通库存(70069)三极管(211)场效应管MOSFET(6)可控硅IGBT(3)
- 功率三极管(87)
- 开关三极管(2)
- 低噪声三极管(74)
- 复合(达林顿)三极管(6)
- 其他三极管(3)
- MOSFET(5)
- 单向可控硅(晶闸管)(2)
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供应BU407,TO-220,有意者请联系！DESCRIPTION
·High Voltage: VCEV= 330V(Min)·Fast Switching Speed- : tf= 750ns(Max)·Low Saturation Voltage- : VCE(sat)=
1.0V(Max)@ IC= 5A APPLICATIONS·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
330VVCEVCollector-Emitter Voltage
330VVCEOCollector-Emitter Voltage
150VVEBOEmitter-Base Voltage6VICCollector Current-Continuous7AICPCollector Current-Peak Repetitive10AICPCollectorCurrent- Peak(10ms)15AIBBase Current 4APCCollector Power Dissipation@ TC=25℃60WTJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 100mA ;IB= 0150
VVCE(sat)Collector-Emitter Saturation VoltageIC= 5A; IB= 0.5A
1.0VVBE(sat)Base-Emitter Saturation VoltageIC= 5A; IB= 0.5A
1.2VICESCollector Cutoff CurrentVCE= 330V; VBE= 0VCE= 200V; VBE= 0VCE= 200V; VBE= 0;TC= 150℃
5.00.11.0mAIEBOEmitter Cutoff CurrentVEB= 6V; IC=0
1.0mAfTCurrent-Gain—Bandwidth ProductIC= 0.5A ; VCE= 10V, ftest= 20MHz10
MHzCOBOutput CapacitanceIE= 0; VCB= 10V; ftest=
1.0MHz 80 pFtfFall TimeIC= 5A; IB1= -IB2= 0.5A, L= 150μH;VCC= 40V
0.75μs
·High Voltage: VCEV= 330V(Min)·Fast Switching Speed- : tf= 750ns(Max)·Low Saturation Voltage- : VCE(sat)=
1.0V(Max)@ IC= 5A APPLICATIONS·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage
330VVCEVCollector-Emitter Voltage
330VVCEOCollector-Emitter Voltage
150VVEBOEmitter-Base Voltage6VICCollector Current-Continuous7AICPCollector Current-Peak Repetitive10AICPCollectorCurrent- Peak(10ms)15AIBBase Current 4APCCollector Power Dissipation@ TC=25℃60WTJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 100mA ;IB= 0150
VVCE(sat)Collector-Emitter Saturation VoltageIC= 5A; IB= 0.5A
1.0VVBE(sat)Base-Emitter Saturation VoltageIC= 5A; IB= 0.5A
1.2VICESCollector Cutoff CurrentVCE= 330V; VBE= 0VCE= 200V; VBE= 0VCE= 200V; VBE= 0;TC= 150℃
5.00.11.0mAIEBOEmitter Cutoff CurrentVEB= 6V; IC=0
1.0mAfTCurrent-Gain—Bandwidth ProductIC= 0.5A ; VCE= 10V, ftest= 20MHz10
MHzCOBOutput CapacitanceIE= 0; VCB= 10V; ftest=
1.0MHz 80 pFtfFall TimeIC= 5A; IB1= -IB2= 0.5A, L= 150μH;VCC= 40V
0.75μs